document number: 93160 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 14-dec-09 1 map block power module single thyristor, 500 a VSKS500-08PBF vishay high power products features ? electrically isolated base plate ? 3000 v rms isolating voltage ? industrial standard package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? compliant to rohs directive 2002/95/ec applications ? battery chargers ? welders ? power converters ?alternators electrical specifications product summary i t(av) 500 a map block power major ratings and characteristics symbol characteristics values units v drm /v rrm 800 v i t(av) 500 a t c 76 c i tsm 50 hz 14 000 a 60 hz 14 658 i 2 t 50 hz 980 ka 2 s 60 hz 894 i 2 t 9800 ka 2 s t j range - 40 to 130 c voltage ratings type number v rrm /v drm , maximum repetitive peak reverse voltage v v rsm /v dsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 130 c ma VSKS500-08PBF 800 900 80
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93160 2 revision: 14-dec-09 VSKS500-08PBF vishay high power products map block power module single thyristor, 500 a on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction half sine wave 500 a 76 c maximum rms on-state current i t(rms) as ac switch 785 a maximum peak, one-cycle on-state, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sine half wave, initial t j = t j maximum 16 646 t = 8.3 ms 17 430 t = 10 ms 100 % v rrm reapplied 14 000 t = 8.3 ms 14 658 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1385 ka 2 s t = 8.3 ms 1265 t = 10 ms 100 % v rrm reapplied 894 t = 8.3 ms 894 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 1385 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j maximum 0.6839 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j maximum 0.7598 low level value on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j maximum 0.393 m high level value on-state slope resistance r t2 (i > x i t(av) ), t j maximum 0.389 maximum on-state voltage drop v tm t j = 25 c, 500 a i pk 1.1 v switching parameter symbol test conditions values units typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c, i t = 400 a 1.3 s typical turn-off time t q i tm = 750 a, t j = t j maximum, di/dt = 60 a/s, v r = 50 v dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 200 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 67 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i drm , i rrm t j = t j maximum, rated v drm /v rrm applied 80 ma rms insulation voltage v ins 50 hz, circuit to base, all te rminal shorted, t = 1 s 3000 v
document number: 93160 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 14-dec-09 3 VSKS500-08PBF map block power module single thyristor, 500 a vishay high power products note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum required dc gate voltage to trigger v gt t j = 25 c anode supply: 12 v resistive load 3v maximum required dc ga te current to trigger i gt 200 ma maximum holding current i h 600 maximum peak positi ve gate voltage +v gm t j = t j maximum, t p 5 ms 20 v maximum peak negati ve gate voltage -v gm 5.0 dc gate voltage not to trigger v gd t j = t j maximum maximum gate current/volta ge not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 0.30 v dc gate current not to trigger i gd 10 ma maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm , i t = 400 a 1000 a/s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg - 40 to 130 c maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.08 k/w maximum thermal resistance, case to heatsink per module r thcs mounting surface smooth, flat and greased 0.035 mounting torque 10 % map block to heatsink a mounting compound is recommended and the torque should be re checked after a period of 3 h to allow for the spread of the compound. lubricated threads. 6 to 8 nm busbar to map block 12 to 15 approximate weight 430 g 15.3 oz. case style map block power r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vsks500 0.013 0.0148 0.018 0.026 0.044 0.082 0.0142 0.019 0.027 0.044 k/w
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93160 4 revision: 14-dec-09 VSKS500-08PBF vishay high power products map block power module single thyristor, 500 a fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current maximum allowa b le case temperature (c) avera g e on- s tate current (a) 100 300 200 400 500 600 0 0 20 40 60 80 100 120 140 30 60 90 120 180 93160_01 conduction angle ? maximum allowa b le case temperature (c) avera g e on- s tate current (a) 100 300 200 400 500 0 0 20 40 60 80 100 120 140 93160_02 30 60 90 120 per leg, t j = 125 c 180 ? conduction period maximum avera g e on- s tate power loss (w) avera g e on- s tate current (a) 100 200 300 400 500 600 0 700 600 500 400 300 200 100 0 180 120 90 60 30 rm s limit 93160_03 conduction angle ? maximum avera g e on- s tate power loss (w) avera g e on- s tate current (a) 100 200 300 400 500 0 600 500 400 300 200 100 0 93160_04 180 120 90 60 30 rm s limit per leg, t j = 125 c ? conduction period peak half s ine wave on- s tate current (a) 10 100 1 6500 8500 10 500 13 500 7500 9500 11 500 14 500 12 500 15 500 93160_05 num b er of equal amplitu d e half cycle current pulses (n) maximum non-repetitive s urge current ver s u s pul s e train duration. initial t j = 130 c no voltage reapplied voltage reapplied peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 10 0.01 5500 9500 13 500 7500 11 500 15 500 17 500 93160_06 maximum non-repetitive s urge current ver s u s pul s e train duration. initial t j = 130 c no voltage reapplied voltage reapplied
document number: 93160 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 14-dec-09 5 VSKS500-08PBF map block power module single thyristor, 500 a vishay high power products fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics ordering information table instantaneous on- s tate current (a) instantaneous on- s tate volta g e (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 1 100 10 10 000 1000 93160_07 t j = 130 c 0.001 0.01 0.1 0.001 93160_08 0.01 0.1 1 10 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 100 1 - module type 2 - circuit configuration (s = single scr) 3 - current rating (500 = 500 a) 4 - voltage rating (08 = 800 v) 5 - pbf = lead (pb)-free device code 4 13 2 5 vsk s 500 - 08 pbf
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93160 6 revision: 14-dec-09 VSKS500-08PBF vishay high power products map block power module single thyristor, 500 a circuit configuration k1 g 1 3 (-) 2 (+) k1 g 1 5 4 6 7 1 2 links to related documents dimensions www.vishay.com/doc?95379
document number: 95379 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 02-dec-09 1 thyristor map block outline dimensions vishay semiconductors dimensions in millimeters notes ? dimensions are nominal ? full engineering drawings are available on request k g 52 + 1.5 - 0.0 20 3.0 fa s t-on tab 2.8 x 0.8 33 0.5 9.5 0.5 5 51.5 0.3 38 0.3 36.8 0.15 44.7 0.15 102.8 0.3 ? 6.3 80 0.3 25 m10 93.5 0.3 ka 5 4 6 7
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
